cystech electronics corp. spec. no. : c140i3 issued date : 2015.06.01 revised date : page no. : 1/ 8 MTD07N04I3 cystek product specification n-channel enhancement mode power mosfet MTD07N04I3 features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? pb-free lead plating and halogen-free package symbol outline to-251 ordering information device package shipping MTD07N04I3-0-ua-g to-251 (pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box bv dss 40v i d @v gs =10v, t c =25 c 50a r ds(on) @v gs =10v, i d =20a 6.3 m (typ) r ds(on) @v gs =4.5v, i d =10a 8.4 m (typ) g d s MTD07N04I3 g gate d drain s source environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, ua: 80 pcs / tube, 50 tubes/box product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c140i3 issued date : 2015.06.01 revised date : page no. : 2/ 8 MTD07N04I3 cystek product specification absolute maximum ratings (t c =25c) parameter symbol limits unit drain-source voltage (note 1) v ds 40 gate-source voltage v gs 20 v continuous drain current @t c =25 c, v gs =10v(silicon limit) (note 1) 63 continuous drain current @t c =100 c, v gs =10v(silicon limit) (note 1) 40 continuous drain current @t c =25 c, v gs =10v(package limit) (note 1) i d 50 continuous drain current @t a =25 c, v gs =10v (note 2) 13.5 continuous drain current @t a =70 c, v gs =10v (note 2) i dsm 10.8 pulsed drain current @ v gs =10v (note 3) i dm 200 avalanche current (note 3) i as 18 a single pulse avalanche energy @ l=0.5mh, i d =18a, v dd =25v e as 81 mj t c =25 c (note 1) 54 t c =100 c (note 1) p d 21 t a =25 c (note 2) 2.5 power dissipation t a =70 c (note 2) p dsm 1.6 w operating junction and storage temperature tj, tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 2.3 thermal resistance, junction-to-ambient, max (note 2) r ja 50 c/w note : 1 . the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and is more useful in setting the upper di ssipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2 oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. 3 . pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and low duty cycles to keep initial t j =25 c.
cystech electronics corp. spec. no. : c140i3 issued date : 2015.06.01 revised date : page no. : 3/ 8 MTD07N04I3 cystek product specification characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 40 - - v v gs =0v, i d =250 a ? bv dss / ? tj - 0.03 - v/ c reference to 25 c, i d =250 a v gs(th) 1.5 - 2.5 v v ds = v gs , i d =250 a *g fs - 22 - s v ds =5v, i d =10a i gss - - 100 na v gs = 20v - - 1 v ds =32v, v gs =0v i dss - - 10 a v ds =32v, v gs =0v, tj=85 c - 6.3 7.6 v gs =10v, i d =20a *r ds(on) - 8.4 10 m v gs =4.5v, i d =10a dynamic *qg(v gs =10v) - 31 46.5 *qg(v gs =4.5v) - 15.7 - *qgs - 6 - *qgd - 7 - nc v dd =20v, i d =20a,v gs =10v *t d(on) - 14.6 - *tr - 18.8 - *t d(off) - 43.4 - *t f - 8 - ns v dd =20v, i d =1a, v gs =10v, r g =1 ciss - 1517 - coss - 188 - crss - 116 - pf v gs =0v, v ds =20v, f=1mhz rg - 1.6 - f=1mhz source-drain diode *i s - - 50 a *v sd - 0.86 1.1 v i s =20a, v gs =0v *trr - 14 - ns *qrr - 8.6 - nc v gs =0, i f =20a, di f /dt=360a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c140i3 issued date : 2015.06.01 revised date : page no. : 4/ 8 MTD07N04I3 cystek product specification typical characteristics typical output characteristics 0 30 60 90 120 150 180 012345 v ds , drain-source voltage(v) i d , drain current (a) 10v , 9v , 8v , 7v v gs =4v v gs =4.5v v gs =5v v gs =6v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1.0 1.2 0 4 8 12 16 20 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 024681 0 drain-source on-state resistance vs junction tempearture 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =20a r ds( on) @tj=25c : 6.3m typ. v gs =4.5v, i d =10a r ds( on) @tj=25c : 8.4mtyp. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =20a
cystech electronics corp. spec. no. : c140i3 issued date : 2015.06.01 revised date : page no. : 5/ 8 MTD07N04I3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =5v gate charge characteristics 0 2 4 6 8 10 0 4 8 121620242832 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =20v i d =20a maximum safe operating area 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) t c =25c, tj=150c v gs =10v, r jc =2.3c/w single pulse dc 100ms r dson limited 1s 100 s 1ms 10ms maximum drain current vs case temperature 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =2.3c/w silicon limit package limit
cystech electronics corp. spec. no. : c140i3 issued date : 2015.06.01 revised date : page no. : 6/ 8 MTD07N04I3 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 20 40 60 80 100 120 140 160 180 0246810 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse power rating, junction to case 0 500 1000 1500 2000 2500 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t c =25c r jc =2.3c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =2.3 c/w
cystech electronics corp. spec. no. : c140i3 issued date : 2015.06.01 revised date : page no. : 7/ 8 MTD07N04I3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c140i3 issued date : 2015.06.01 revised date : page no. : 8/ 8 MTD07N04I3 cystek product specification to-251 dimension millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 6.40 6.80 0.252 0.268 g 0.50 0.70 0.020 0.028 b 5.20 5.50 0.205 0.217 h 2.20 2.40 0.087 0.094 c 6.80 7.20 0.268 0.283 j 0.45 0.55 0.018 0.022 d 7.20 7.80 0.283 0.307 k 0.45 0.60 0.018 0.024 e 2.30 ref 0.091 ref l 0.90 1.50 0.035 0.059 f 0.60 0.90 0.024 0.035 m 5.40 5.80 0.213 0.228 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . style: pin 1.gate 2.drain 3.source 3-lead to-251 plastic package cystek packa g e code: i3 marking: d07 n04 product n ame date code 1 2 3
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